Magnetic memory with high thermal budget

ABSTRACT

A magnetic memory having a base layer with a wetting layer and seed layer is disclosed. The wetting layer and seed layer promotes FCC structure along the (111) orientation to improve PMA. The seed layer includes first and second seed layer separated by a surface smoother, such as a surfactant layer. This enhances the smoothness of the seed layer, resulting in smoother interface in the MTJ stack, which leads to improved thermal endurance.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the priority benefits of U.S. ProvisionalApplication Ser. No. 62/121,494, filed on Feb. 27, 2015 and U.S.Provisional Application Ser. No. 62/135,720, filed on Mar. 20, 2015, andthis application cross-references to U.S. patent application Ser. No.15/057,109, concurrently filed on Feb. 29, 2016, the disclosures ofwhich are herein incorporated by reference in their entirety for allpurposes.

BACKGROUND

A magnetic memory cell or device stores information by changingelectrical resistance of a magnetic tunnel junction (MTJ) element. TheMTJ element typically includes a thin insulating tunnel barrier layersandwiched between a magnetically fixed layer and a magnetically freelayer, forming a magnetic tunnel junction. Magnetic orientations of thefixed and free layers may be in a vertical direction, forming aperpendicular MTJ (or pMTJ) element. The pMTJ element could be either ina bottom pinned pMTJ element or a top pinned pMTJ element. The bottompinned pMTJ element is formed by having the magnetically fixed layerdisposed below the magnetically free layer while the top pinned pMTJelement is formed by having the fixed layer disposed above the freelayer. In order to obtain strong perpendicular magnetic anisotropy (PMA)for the fixed layer, a well crystal orientation of the fixed layer isrequired. Several conventional techniques have been proposed to improvePMA for the fixed layer. However, these conventional techniquesundesirably lead to reduced thermal budget and thermal endurance of thepMTJ stack.

In view of the foregoing, it is desirable to provide a pMTJ element withimproved PMA and enhanced thermal endurance and thermal budget.Furthermore, it is also desirable to provide a process for forming suchpMTJ element which is cost effective and compatible with logicprocessing.

SUMMARY

Embodiments of the present disclosure generally relate to semiconductordevices and methods for forming a semiconductor device. In oneembodiment, a method of forming a memory cell is disclosed. The methodincludes forming a select unit on a substrate. The select unit includesa transistor having a first source/drain (S/D) region, a second S/Dregion, and a gate between the first and second S/D regions. Adielectric layer is formed on the substrate covering the select unit.The dielectric layer includes storage pad coupled to the first S/Dregion. A storage unit is formed on the storage pad. Forming the storageunit includes forming a bottom electrode and forming a fixed layer overthe bottom electrode. The fixed layer includes a hard layer disposedover a base layer. The base layer promotes face-centered cubic (FCC)structure along (111) orientation to increase perpendicular anisotropy.The base layer includes a wetting layer and a seed layer. The seed layerincludes a first seed layer, a roughness smoother to improve surfacesmoothness of the first seed layer and a second seed layer formed overthe roughness smoother. The roughness smoother improves surfacesmoothness of the second seed layer. A hard layer is formed over theseed layer. Improved surface smoothness of the seed layer improvessurface smoothness of the hard layer to improve thermal endurance.Forming the storage unit includes forming at least one tunneling barrierlayer over the hard layer, forming a storage layer over the tunnelingbarrier layer, and forming a top electrode over the storage layer. Themethod also includes forming a bitline coupled to the top electrodelayer.

These and other advantages and features of the embodiments hereindisclosed, will become apparent through reference to the followingdescription and the accompanying drawings. Furthermore, it is to beunderstood that the features of the various embodiments described hereinare not mutually exclusive and can exist in various combinations andpermutations.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form part ofthe specification in which like numerals designate like parts,illustrate preferred embodiments of the present disclosure and, togetherwith the description, serve to explain the principles of variousembodiments of the present disclosure.

FIG. 1 shows simplified diagrams of parallel state and anti-parallelstate of a bottom pinned perpendicular MTJ element of a magnetic memorycell.

FIG. 2 shows a schematic diagram of an embodiment of a magnetic memorycell.

FIG. 3 shows an array of magnetic memory cells.

FIG. 4 shows a cross-sectional view of an embodiment of a memory cell.

FIGS. 5a-5b show cross-sectional views of embodiments of a storage unitof magnetic memory cell.

FIGS. 6a-6b show cross-sectional views of embodiments of a storage unitof magnetic memory cell.

FIG. 7a-7l show cross-sectional views of an embodiment of a process forforming a memory cell

DETAILED DESCRIPTION

Embodiments of the present disclosure generally relate to memory cellsor devices. In one embodiment, the memory cells are magnetoresistivememory cells. For example, the memory devices may be spin transfertorque magnetoresistive random access memory (STT-MRAM) devices. Amagnetoresistive memory cell includes a magnetic tunneling junction(MTJ) storage unit. The MTJ storage unit of the present disclosureincludes a base layer having a seed layer with roughness smoother orcrystallinity enhancing layer and a wetting layer that provides animproved PMA of the fixed layer of the pMTJ stack and further enhancesthe thermal endurance and thermal budget of the pMTJ stack. Othersuitable types of memory cells may also be useful. Such memory devices,for example, may be incorporated into standalone memory devicesincluding, but not limited to, USB or other types of portable storageunits, or ICs, such as microcontrollers or system on chips (SoCs). Thedevices or ICs may be incorporated into or used with, for example,consumer electronic products, or relate to other types of devices.

FIG. 1 shows a simplified cross-sectional view of an embodiment of abottom pinned perpendicular MTJ (pMTJ) unit 110 of a magnetic or memorycell. The MTJ unit includes a pMTJ element or stack 120 disposed betweena bottom electrode 131 and a top electrode 132. The bottom electrode isproximate to the substrate on which the memory cell is formed while thetop electrode is distal from the substrate.

The MTJ element includes a magnetically fixed (pinned) layer 126, atunneling barrier layer 127 and a magnetically free layer 128. In oneembodiment, the magnetically fixed layer is disposed below the magneticfree layer, forming a bottom pinned pMTJ stack. The magnetic orientationof the fixed layer is fixed in a first perpendicular direction. The termperpendicular direction, for example, refers to the direction which isperpendicular to the surface of a substrate or perpendicular to theplane of the layers of the MTJ element. As shown, the firstperpendicular direction is in an upward direction away from thesubstrate. Providing the first perpendicular direction which is in adownward direction towards the substrate may also be useful. As for themagnetic orientation of the free layer, it may be programmed to be in afirst or same direction as the fixed layer or in a second or oppositedirection as the fixed layer.

For example, as shown by structure 111, the magnetic direction of thefree layer is programmed to be in the second or anti-parallel directionto the fixed layer. The corresponding MTJ electrical resistance betweenthe free layer 128 and the fixed layer 126 is denoted as R_(AP).Structure 112 illustrates that the magnetization of the free layer isprogrammed to be in the first or parallel direction to the fixed layer.The corresponding MTJ electrical resistance between the free layer 128and the fixed layer 126 is denoted as R_(P). The resistance R_(AP) ishigher than the resistance R_(P).

FIG. 2 shows a schematic diagram of an embodiment of a memory cell 200.The memory cell is a non-volatile memory cell. For example, the memorycell may be a magnetoresistive memory cell. In one embodiment, thememory cell is a Spin Transfer Torque-Magnetoresistive Random AccessMemory (STT-MRAM) cell. Other suitable types of memory cells may also beuseful. The memory cell includes a magnetic storage unit 210 and a cellselector unit 240. The storage unit is coupled to the cell selectorunit. For example, the storage unit and cell selector unit are coupledat a first cell node 239 of the memory cell. The storage unit 210, inone embodiment, is a magnetic storage unit and includes a pMTJ element220. The pMTJ element may be similar to that described in FIG. 1. Othersuitable types of MTJ elements may also be useful.

The pMTJ element includes first and second electrodes 231 and 232. Thefirst electrode, for example, may be a bottom electrode while the secondelectrode may be a top electrode. Other configurations of electrodes mayalso be useful. In one embodiment, the top electrode of the storage unitis electrically connected to a bit line (BL). The bottom electrode ofthe storage element is connected to the first cell node 239.

The cell selector unit includes a selector for selecting the memorycell. The selector, for example, may be a select transistor. In oneembodiment, the select transistor is a metal oxide semiconductor (MOS)transistor. In one embodiment the selector is a n-type MOS transistor.The select transistor includes first and second source/drain (S/D)terminals 245 and 246 and a gate or control terminal 244. The first S/Dterminal may be referred to as a drain and the second S/D terminal maybe referred to as the source. The S/D terminals, for example, areheavily doped regions with first polarity type dopants, defining thefirst type transistor. For example, in the case of a n-type transistor,the S/D terminals are n-type heavily doped regions. Other types oftransistors or selectors may also be useful.

In one embodiment, the first terminal of the cell selector and firstelectrode of the storage unit are commonly coupled at the first cellnode. For example, the first S/D terminal of the cell selector iscoupled to the bottom electrode of the storage unit. For example, thedrain terminal is coupled to the storage unit. The second or sourceterminal of the cell selector is coupled to a source line (SL). As forthe gate terminal, it is coupled to a wordline WL.

FIG. 3 shows a schematic diagram of an embodiment of a memory array 300.The array includes a plurality of memory cells 200 interconnected. Thememory cells may be similar to those described in FIG. 2. For example,the memory cells are MRAM cells, such as STT-MRAM cells. Common elementsmay not be described or described in detail. Other suitable types ofmemory cells may also be useful.

As shown, the array includes four memory cells arranged in a 2×2 array.For example, the array is arranged to form two rows and two columns ofmemory cells. Memory cells of a row are interconnected by a wordline(WL1 or WL2) while memory cells of a column are interconnected by abitline (BL1 or BL2). A second S/D or source terminal is coupled to asource line (SL1 or SL2). As shown, the SLs are in the row or wordlinedirection. Other suitable cell configurations may also be useful.Although the array is illustrated as a 2×2 array, it is understood thatarrays of other sizes may also be useful.

FIG. 4 shows a cross-sectional view of an exemplary embodiment of amemory cell 400 of a device. The cross-sectional view, for example isalong a second or bitline direction of the device. The device, as shown,includes a memory cell 400. The memory cell, for example, may be a NVMmemory cell. The memory cell, in one embodiment, is a magnetoresistiveNVM cell, such as a STT-MRAM cell. The memory cell, for example, issimilar to that described in FIG. 2. Common elements may not bedescribed or described in detail.

The memory cell is disposed on a substrate 405. For example, the memorycell is disposed in a cell region of the substrate. The cell region maybe part of an array region. For example, the array region may include aplurality of cell regions. The substrate may include other types ofdevice regions (not shown), such as high voltage (HV) as well as logicregions, including low voltage (LV) and intermediate voltage (IV) deviceregions. Other types of regions may also be provided.

The substrate, for example, is a semiconductor substrate, such as asilicon substrate. For example, the substrate may be a lightly dopedp-type substrate. Providing an intrinsic or other types of dopedsubstrates, such as silicon-germanium (SiGe), germanium (Ge),gallium-arsenic (GaAs) or any other suitable semiconductor materials,may also be useful. In some embodiments, the substrate may be acrystalline-on-insulator (COI) substrate. A COI substrate includes asurface crystalline layer separated from a crystalline bulk by aninsulator layer. The insulator layer, for example, may be formed of adielectric insulating material. The insulator layer, for example, isformed from silicon oxide, which provides a buried oxide (BOX) layer.Other types of dielectric insulating materials may also be useful. TheCOI substrate, for example, is a silicon-on-insulator (SOI) substrate.For example, the surface and bulk crystalline layers are singlecrystalline silicon. Other types of COI substrates may also be useful.It is understood that the surface and bulk layers need not be formed ofthe same material.

Front-end-of-line (FEOL) processing is performed on the substrate. TheFEOL process, for example, forms n-type and p-type devices ortransistors on the substrate. The p-type and n-type device form acomplementary MOS (CMOS) device. The FEOL processing, for example,includes forming isolation regions, various device and isolation wells,transistor gates and transistor source/drain (S/D) regions and contactor diffusion regions serving as substrate or well taps. Forming othercomponents with the FEOL process may also be useful.

Isolation regions 480, for example, serve to isolate different deviceregions. The isolation regions may be shallow trench isolation (STI)region. To form STI regions, trenches are formed and filled withisolation material. A planarization process, such as chemical mechanicalpolishing (CMP) is performed to remove excess dielectric material,forming isolation regions. Other types of isolation regions may also beuseful. The isolation regions are provided to isolate device regionsfrom other regions.

Device wells, for example, serve as bodies of p-type and n-typetransistors. Device wells are doped wells. Second type doped devicewells serve as bodies of first type transistors. For example, p-typedevice wells serve as bodies of n-type transistors and n-type devicewells serve as bodies of p-type transistors. Isolation wells may be usedto isolate device wells from the substrate. The isolation wells aredeeper than the device wells. For example, isolation wells encompass thedevice wells. The isolation wells are first type doped wells. Forexample, n-type isolation wells are used to isolate p-type device wells.Separate implants may be employed to form different doped device wellsand isolation wells using, for example, implant masks, such asphotoresist masks. The wells, for example, are formed after formingisolation regions.

Gates of transistors are formed on the substrate. For example, layers ofthe gate, such as gate dielectric and gate electrode are formed on thesubstrate and patterned to form the gates. The gate dielectric may be asilicon oxide layer while the gate electrode layer may be polysilicon.The gate electrode may be doped, for example, to reduce sheetresistance. Other types of gate dielectric and gate electrode layers mayalso be useful. The gate dielectric layer may be formed by thermaloxidation and the gate electrode layer may be formed by chemical vapordeposition (CVD). Separate processes may be performed for forming gatedielectrics of the different voltage transistors. This is due to, forexample, different gate dielectric thicknesses associated with thedifferent voltage transistors. For example, HV transistor will have athicker gate dielectric than a LV transistor.

The gate layers are patterned by, for example, mask and etch techniques.For example, a patterned photoresist mask may be provided over the gatelayers. For example, a photoresist layer is formed over the gate layersand lithographically exposed by using a reticle. The mask layer isdeveloped, forming a patterned mask with the desired pattern of thereticle. To improve lithographic resolution, an anti-reflective coating(ARC) layer may be provided between the gate layer and resist masklayer. An anisotropic etch, such as a reactive ion etch (RIE) is used topattern the gate layers to form the gates using the patterned masklayer.

Doped contact regions 445 and 446, such as source/drain (S/D) regionsand well or substrate taps are formed in exposed active regions of thesubstrate after forming the gates. The contact regions are heavily dopedregions. Depending on the type of transistor and well tap, the contactregions may be heavily doped n-type or p-type regions. For n-typetransistors, S/D regions are heavily doped n-type regions and for p-typetransistors, S/D regions are heavily doped p-type regions. For welltaps, they are the same dopant type as the well.

A S/D region may include lightly doped diffusion (LDD) and halo regions.A LDD region is a lightly doped region with first polarity type dopantswhile the halo region is a lightly doped region with second polaritytype dopants. For example, the halo region includes p-type dopants for an-type transistor while the LDD region includes n-type dopants forn-type transistors. The halo and LDD regions extend under the gate. Ahalo region extends farther below the gate than a LDD region. Otherconfigurations of LDD, halo and S/D regions may also be useful.

Dielectric spacers (not shown) may be provided on the gate sidewalls ofthe transistors. The spacers may be used to facilitate formingtransistor halo, LDD and transistor S/D regions. For example, spacersare formed after halo and LDD regions are formed. Spacers may be formedby, for example, forming a spacer layer on the substrate andanisotropically etching it to remove horizontal portions, leaving thespacers on sidewalls of the gates. After forming the spacers, an implantis performed to form the S/D regions. Separate implants may be employedto form different doped regions using, for example, implant masks, suchas photoresist mask. Well taps of the same dopant type as S/D regionsare formed at the same time.

As shown, the FEOL processing forms a cell region isolated by anisolation region 480, such as a STI region. The cell region is for amemory cell. Isolation regions may be provided to isolate columns ofmemory cells. Other configurations of isolation regions may also beuseful. The cell region may include a cell device well (not shown). Thecell device well, for example, serves as a body well for a transistor ofthe memory cell. The device well may be doped with second polarity typedopants for first polarity type transistors. The device well may belightly or intermediately doped with second polarity type dopants. Insome cases, a cell device isolation well (not shown) may be provided,encompassing the cell device well. The isolation well may have a dopanttype which has the opposite polarity to that of the cell device well.For example, the isolation well may include first polarity type dopants.The isolation well serves to isolate the cell device well from thesubstrate. Well biases may be provided to bias the wells.

The cell device well may be a common well for the cell regions in thearray region. For example, the cell device well may be an array well.The cell device isolation well may serve as the array isolation well.Other configurations of device and isolation wells may also be useful.Other device regions of the device may also include device and/or deviceisolation wells.

The memory cell includes a cell selector unit 440 and a storage unit410. The FEOL forms the cell selector in the cell region. The cellselector unit includes a selector for selecting the memory cell. Theselector, for example, may be a select transistor. In one embodiment,the select transistor is a metal oxide semiconductor (MOS) transistor.The transistor, as shown, includes first and second source/drain (S/D)regions 445 and 446 formed in the substrate and a gate 444 disposed onthe substrate between the S/D regions. The first S/D region may bereferred to as a drain region and the second S/D region may be referredto as a source region. The S/D regions, for example, are heavily dopedregions with first polarity type dopants, defining the first typetransistor. For example, in the case of a n-type transistor, the S/Dregions are n-type heavily doped regions. Other types of transistors orselectors may also be useful.

As for the gate, it includes a gate electrode over a gate dielectric.The gate electrode may be polysilicon while the gate dielectric may besilicon oxide. Other types of gate electrode and gate dielectricmaterials may also be useful. A gate, for example, may be a gateconductor along a first or wordline direction. The gate conductor formsa common gate for a row of memory cells.

As discussed, a S/D region may include LDD and halo regions (not shown).Dielectric spacers (not shown) may be provided on the gate sidewalls ofthe transistors to facilitate forming transistor halo, LDD andtransistor S/D regions. It is understood that not all transistorsinclude LDD and/or halo regions.

After forming the cell selector unit and other transistors,back-end-of-line (BEOL) processing is performed. The BEOL processincludes forming interconnects in interlevel dielectric (ILD) layers490. The interconnects connect the various components of the IC toperform the desired functions. An ILD layer includes a metal level 494and a contact level 492. Generally, the metal level includes conductorsor metal lines 495 while the contact level includes contacts 493. Theconductors and contacts may be formed of a metal, such as copper, copperalloy, aluminum, tungsten or a combination thereof. Other suitable typesof metal, alloys or conductive materials may also be useful. In somecases, the conductors and contacts may be formed of the same material.For example, in upper metal levels, the conductors and contacts may beformed by dual damascene processes. This results in the conductors andcontacts having the same material. In some cases, the conductors andcontacts may have different materials. For example, in the case wherethe contacts and conductors are formed by single damascene processes,the materials of the conductors and contacts may be different. Othertechniques, such as reactive ion etch (RIE) may also be employed to formmetal lines.

A device may include a plurality of ILD layers or levels. For example, xnumber of ILD levels may be provided. As illustrated, the deviceincludes 5 ILD levels (x=5). Other number of ILD levels may also beuseful. The number of ILD levels may depend on, for example, designrequirements or the logic process involved. A metal level of an ILDlevel may be referred to as M_(i), where i is from 1 to x and is thei^(th) ILD level of x ILD levels. A contact level of an ILD level may bereferred to as V_(i-1), where i is the i^(th) ILD level of x ILD levels.

The BEOL process, for example, commences by forming a dielectric layerover the transistors and other components formed in the FEOL process.The dielectric layer may be silicon oxide. For example, the dielectriclayer may be silicon oxide formed by chemical vapor deposition (CVD).The dielectric layer serves as a premetal dielectric layer or firstcontact layer of the BEOL process. The dielectric layer may be referredto as CA level of the BEOL process. Contacts are formed in the CA leveldielectric layer. The contacts may be formed by a single damasceneprocess. Via openings are formed in the dielectric layer using mask andetch techniques. For example, a patterned resist mask with openingscorresponding to the vias is formed over the dielectric layer. Ananisotropic etch, such as RIE, is performed to form the vias, exposingcontact regions below, such as S/D regions and gates. A conductivelayer, such as tungsten is deposited on the substrate, filling theopenings. The conductive layer may be formed by sputtering. Othertechniques may also be useful. A planarization process, such as CMP, isperformed to remove excess conductive material, leaving contact plugs inthe CA level.

After forming contacts in the CA level, the BEOL process continues toform dielectric layer over the substrate, covering the CA leveldielectric layer. The dielectric layer, for example, serves as a firstmetal level M1 of the first ILD layer. The upper dielectric layer, forexample, is a silicon oxide layer. Other types of dielectric layers mayalso be useful. The dielectric layer may be formed by CVD. Othertechniques for forming the dielectric layer may also be useful.

Conductive lines are formed in the M1 level dielectric layer. Theconductive lines may be formed by a damascene technique. For example,the dielectric layer may be etched to form trenches or openings using,for example, mask and etch techniques. A conductive layer is formed onthe substrate, filling the openings. For example, a copper or copperalloy layer may be formed to fill the openings. The conductive materialmay be formed by, for example, plating, such as electro or electrolessplating. Other types of conductive layers or forming techniques may alsobe useful. Excess conductive materials are removed by, for example, CMP,leaving planar surface with the conductive line and M1 dielectric. Thefirst metal level M1 and CA may be referred as a lower ILD level.

The process continues to form additional ILD layers. For example, theprocess continues to form upper ILD layers or levels. The upper ILDlevels may include ILD level 2 to ILD level x. For example, in the casewhere x=5 (5 levels), the upper levels include ILD levels from 2 to 5,which include via levels V1 to V4 and metal levels M2 to M5. The numberof ILD layers may depend on, for example, design requirements or thelogic process involved. The upper ILD layers may be formed of siliconoxide. Other types of dielectric materials, such as low k, high k or acombination of dielectric materials may also be useful. The ILD layersmay be formed by, for example, CVD. Other techniques for forming the ILDlayers may also be useful.

The conductors and contacts of the upper ILD layers may be formed bydual damascene techniques. For example, vias and trenches are formed,creating dual damascene structures. The dual damascene structure may beformed by, for example, via first or via last dual damascene techniques.Mask and etch techniques may be employed to form the dual damascenestructures. The dual damascene structures are filled with a conductivelayer, such as copper or copper alloy. The conductive layer may beformed by, for example, plating techniques. Excess conductive materialis removed by, for example, CMP, forming conductors and contacts in anupper ILD layer.

A dielectric liner (not shown) may be disposed between ILD levels and onthe substrate. The dielectric liner, for example, serves as an etch stoplayer. The dielectric liner may be formed of a low k dielectricmaterial. For example, the dielectric liner may be nBLOK. Other types ofdielectric materials for the dielectric liner may also be useful.

The uppermost ILD level (e.g., M5) may have different design rules, suchas critical dimension (CD), than the lower ILD levels. For example, Mxmay have a larger CD than metal levels M1 to Mx−1 below. For example,the uppermost metal level may have a CD which is 2X or 6X the CD of themetal levels below. Other configurations of the ILD levels may also beuseful.

As shown, S/D contacts are disposed in the CA level. The S/D contactsare coupled to the first and second S/D regions of the selecttransistor. Other S/D contacts to other S/D regions of transistors mayalso be provided. The CA level may include a gate contact (not shown)coupled to the gate of the select transistor. The gate contact may bedisposed in another cross-section of the device. The contacts may betungsten contacts while contact pads may be copper. Other types ofcontacts and contact pad may also be useful. Other S/D and gate contactsfor other transistors may also be provided.

As described, metal lines are provided in M1. The metal lines arecoupled to the S/D contacts. In one embodiment, a SL is coupled to thesecond S/D region of the select transistor. As for the first S/Dcontact, it may be coupled to contact pad or island in M1. The contactpads provide connections to upper ILD levels. The metal lines or contactpads may be formed of copper or copper alloy. Other types of conductivematerial may also be useful.

As for the upper ILD levels, for example, from 2 to 5, they includecontacts in the via level and contact pads/metal lines in the metallevel. The contacts and contact pads provide connection from M5 to thefirst S/D region of the select transistor.

A pad level (not shown) is disposed over the uppermost ILD level. Forexample, a pad dielectric level is disposed over Mx. In the case wherethe device includes 5 metal levels, the pad level is disposed over M5.The pad dielectric layer, for example, may be silicon oxide. Other typesof dielectric materials may also be useful. The pad dielectric layerincludes pads, such as bond pads or pad interconnects for providingexternal interconnections to the components. Bond pads may be used forwire bonding while pad interconnects may be provided for contact bumps.The external interconnections may be input/output (I/O), power andground connections to the device. The pads, for example, may be aluminumpads. Other types of conductive pads may also be useful. A passivationlayer, such as silicon oxide, silicon nitride or a combination thereof,may be provided over the pad level. The passivation layer includesopenings to expose the pads.

A dielectric liner may be disposed between the uppermost metal level andpad level. The dielectric liner, for example, serves as an etch stoplayer during via etch process and it may also serve as a diffusionbarrier layer for, for example, copper (Cu) layer. The dielectric linermay be a low k dielectric liner. For example, the dielectric liner maybe nBLOK. Other suitable types of dielectric materials for thedielectric liner may also be useful.

The storage unit 410 of the memory cell is disposed in a storagedielectric layer 450. The storage dielectric layer may be a via level ofan ILD level. As shown, the storage dielectric layer is V1 of M2.Providing the storage dielectric layer at other via levels may also beuseful. In other embodiments, the storage dielectric layer may be adedicated storage dielectric layer and not part of an interconnectlevel. Other configurations of storage dielectric layer may also beuseful. The storage unit 410 includes a storage element disposed betweentop and bottom electrodes, forming a pMTJ element. The storage element,in one embodiment, is a bottom pinned pMTJ storage element, such as thatdescribed in FIG. 1 and FIGS. 5a-5b and FIGS. 6a-6b as will be describedlater. Common elements may not be described or described in detail.

In one embodiment, the bottom electrode of the storage unit is coupledto a drain of the select transistor. For example, the bottom electrodeis coupled to a contact pad in the M1 level and a via contact in the CAlevel. Other configurations of coupling the bottom electrode may also beuseful. The top electrode is coupled to a BL. For example, the topelectrode is coupled to the BL disposed in M2. The BL is along a bitlinedirection. As for the source of the select transistor, it is coupled tothe SL. The SL, for example, may be in the first or wordline direction.Providing a SL in the second or bitline direction may also be useful.For example, a via contact in CA is provided to couple the source regionto SL in M1. Providing SL in other levels may also be useful.

As for the gate of cell selector, it is coupled to a WL. The WL, forexample, is along a wordline direction. The bitline and wordlinedirections are perpendicular to each other. As shown, the WL is disposedin M3. The WL may be coupled to the gate by contact pads in M2 and M1and via contacts in V2 and V1 (not shown). Other configurations ofcoupling the WL to the gate may also be useful. For example, the WL maybe disposed in other metal levels.

In general, lines which are parallel in a first direction may be formedin the same metal level while lines which are in a second directionperpendicular to the first may be formed in a different metal level. Forexample, WLs and BLs are formed in different metal levels.

As described, the cell dielectric 450 is disposed in V1 in between M1and M2. It is understood that providing other configurations of celldielectric layers may be also useful.

FIG. 5a shows a cross-sectional view of an embodiment of a magneticstorage unit 510 a of a magnetic cell. In one embodiment, the storageunit includes a bottom pinned pMTJ stack 520 disposed between bottom andtop electrodes 531 and 532. The pMTJ stack or element includes a fixedlayer 526, a free layer 528, and a tunneling barrier layer 527separating the fixed layer from the free layer. As shown, the fixedlayer is disposed below the free layer, forming the bottom pinned pMTJelement. A capping layer 580 is disposed over the free layer. The fixedlayer, tunneling barrier layer and the free layer form the pMTJ stack520.

The top and bottom electrode layers may be formed of a conductivematerial. In one embodiment, the top and bottom electrode may be formedof Ta. Other suitable types of electrodes may also be useful. Forexample, Ti, TaN, TiN or a combination of different electrode materials,including Ta, may also be useful. Furthermore, it is understood that thetop and bottom electrodes need not be of the same material. A thicknessof the electrode layers may be about 1 to 100 nm. The electrodes may beformed by physical vapor deposition (PVD). Other deposition techniquesmay also be useful.

The various layers of the MTJ element will be described. For example,the various layers will be described from the bottom electrode up to thetop electrode.

The fixed layer is a fixed layer stack which includes a base layer 560,a hard layer 570 and a reference layer 568. In one embodiment, a spacerlayer 578 is provided between the hard layer and the reference layer.

The base layer promotes orientation of the hard layer in a desiredcrystal structure or orientation. The base layer promotes crystalorientation of the hard layer in a desired orientation to increaseperpendicular magnetic anisotropy (PMA). In one embodiment, the baselayer promotes face-centered cubic (FCC) crystal structure of the hardlayer along (111) orientation.

In one embodiment, the base layer includes a wetting layer 562 and aseed layer 564. The wetting layer promotes adhesion between the bottomelectrode layer and the seed layer. In one embodiment, the wetting layerenhances the FCC structure of the seed layer along (111). This increasesPMA. The wetting layer, in one embodiment, promotes a FCC structurealong the (111) orientation. In one embodiment, the wetting layer is aMg layer. The wetting layer may be formed by PVD. The thickness of thewetting layer may be about 1 nm. Other thicknesses may also be useful.

In other embodiments, the wetting layer may include multiple layers. Themultiple layers include Mg and other layers which together promote FCCstructure along the (111) orientation. For example, the multiple layersmay include layers selected from Mg, layers having a BCC structure along(110) orientation and layers having a HCP structure along the (0002)orientation. Layers having a BCC (110) include Mo, Cr, W, Nb and Vlayers while layers having a HCP (0002) wetting layer may include Hf andRu layers. Other suitable types of BCC (110) and HCP (0002) layers mayalso be used as the wetting layer as long as these layers promote FCCcrystal structure of the hard layer along (111) orientation.

In one embodiment, the seed layer includes a roughness smoother 566between first and second seed layers 564 a and 564 b. A seed layer, inone embodiment, includes multiple bilayers, forming a multi-bilayeredseed stack or seed layer. For example, the first seed layer includesmultiple bilayers and the second seed layers include multiple bilayers.By providing a seed layer having multiple layers, a thinner seed layermay be achieved compared to conventional seed layers. For example, thetotal thickness of the seed layer, including the first and second seedlayers and roughness smoother, is about 5 nm or less. It is understoodthat the thickness of the first and second seed layers need not beequal. A thinner seed layer reduces total interface or surface roughnessof the fixed layer. The reduced interface roughness improves thermalendurance, for example at about 400° C. This enables compatibility withcomplementary metal oxide semiconductor (CMOS) processes.

A multi-bilayered seed layer has a desired texture to produce strongPMA. In one embodiment, the texture of a multi-bilayered seed layer hasa FCC structure along the (111) orientation. A bilayer of the seedstack, in one embodiment, includes a first layer Y having a thickness t1and a second layer X having a thickness t2. The first layer Y, forexample, may be disposed below the second layer X. The thickness t1 maybe less than a mono layer and t2 may be less than a mono layer. Forexample, t1 may be from about 1.5 to 3.5 A and t2 may be about 1.5 to3.5 A. The layers of the bilayers may be formed by PVD.

In one embodiment, the multi-bilayered seed layer is defined by(Y_(t1)/X_(t2))_(n), where

t1 is the thickness of layer Y,

t2 is the thickness of layer X, and

n=the number of bilayers.

The value of n may be from about 2-20. The total thickness T of a seedlayer is equal to (t1+t2)*n. For the first seed layer, n may bedesignated as n1 and for the second seed layer, n may be designated asn2. In one embodiment, the total thickness T of the seed layer,including the roughness smootness, is about 5 nm or less.

In one embodiment, layer Y is a magnetic layer. For example, layer Y maybe Ni, CoNi or NiFe. Other types of magnetic layers may also be useful.As for layer X, it is a non-magnetic layer having a BCC structure alongthe (110) orientation with high recrystallization temperature. Providinga non-magnetic layer having a BCC structure in the (110) orientationwith high recrystallization temperature improves thermal endurance.Layer X, for example, is a Mo, Cr, W, Nb or V layer. In one embodiment,a bilayer of the seed layer may be Ni/Cr. For example, the seed layer isformed of (Ni/Cr)_(n). Other suitable types of bilayers may also beuseful. For example, other combinations of Y and X may be selected. Itis understood that not all bilayers of the seed layer need to be thesame.

As for the roughness smoother 566, it improves the surface smoothness ofthe first seed layer 564 a. The roughness smoother produces a smoothsurface less than 4 A RMS. Preferably, the roughness smoother produces asmooth surface less than 1 A RMS. In one embodiment, the roughnesssmoother is a surfactant layer. The surfactant layer improves surfacesmoothness of the first seed layer. The surfactant layer, in oneembodiment, includes first and second surfactant layers. The firstsurfactant layer is a layer with small atoms for filling gaps to cleanthe interface while the second surfactant layer is deposited over it.The surfactant layer, for example, may be MgTa. For example, Mg fillsthe gaps on the surface of the first seed layer to clean the interfacewhile Ta is deposited over it. Other suitable types of surfactant layersmay also be useful. For example, MgMo or MgW may serve as a surfactantlayer. For example, the surfactant layer may be MgX, where X is Ta, Moor W. The thickness of the surfactant layer should be thin to avoidmagnetic decoupling between first and second seed layers. The thicknessof the first surfactant layer (e.g., Mg) may be about 2 to 6 A while thethickness of the second surfactant layer (e.g., Ta) may be about 3 to 6A.

In another embodiment, the roughness smoother includes a surfacetreatment to improve surface smoothness. For example, a plasma treatmentmay be performed on the top surface of the first seed layer to reducesurface roughness or to improve surface smoothness of the first seedlayer. The plasma treatment may include an Ar plasma sputter back etchto smoothen the surface of the seed layer. The plasma etch for example,includes flow between 1 sccm to 100 sccm for about 1 to 250 seconds.Other suitable plasma treatment parameters may also be used.

The hard layer 526 is formed over the base layer 560. For example, thehard layer is formed over the seed layer of the base layer. The hardlayer, in one embodiment, is a composite hard layer with multiple layersto form a hard layer stack. In one embodiment, the hard layer includes asynthetic antiferromagnetic (SAF) layer 570. The SAF layer, in oneembodiment, is a composite SAF layer which includes first and secondantiparallel (AP) layers 572 and 576 separated by a coupling layer 574.For example, the first AP (AP1) layer and the second AP (AP2) layer areseparated by the coupling layer.

In one embodiment, the AP layers are configured with a FCC structurealong the (111) orientation. The (111) orientation, as discussed, isfacilitated by the base layer. The first and second AP layers havemagnetization directions which are antiparallel. For example, the AP1layer has a first perpendicular magnetization direction which is theopposite of the second perpendicular magnetization direction of the AP2layer. For example, the perpendicular magnetization of the first layeris downwards while the second perpendicular magnetization direction isupwards.

An AP layer may include multiple AP bilayers, forming an AP bilayeredstack or layer. A bilayer of an AP layer may be cobalt/nickel (Co/Ni).For example, a Co/Ni bilayer includes a layer of nickel which isdisposed over a layer of cobalt. Other types of AP layers, such asCoFe/Ni or CoFeB/Ni, may also be useful. The sequence of layer of an APlayer can have any sequence. In one embodiment, the Ni layer is theuppermost layer of the AP layer. For example, depending on theconfiguration, upper most layer may be a bilayer with Ni as at the topor a single layer of Ni.

As for the coupling layer, it serves to promoteRuderman-Kittle-Kasuya-Yosida (RKKY) coupling. The coupling layer, inone embodiment, is a ruthenium (Ru) layer. Providing other types ofcoupling layers may also be useful. The various layers of the SAF layermay be formed by PVD.

In one embodiment, a spacer layer 578 is provided between the second APlayer and reference layer 568. The spacer layer, for example, serves asa texture breaking layer. The spacer layer facilitates a differenttexture for the reference layer. For example, the spacer layer enablesthe reference layer having a different texture from that of the hardlayer. For example, the spacer layer enables the reference layer to beamorphous when deposited. In one embodiment, the spacer layer may be atantalum (Ta) layer. The thickness of the spacer layer should be thin tomaintain magnetic coupling between the second AP layer and referencelayer. The spacer layer, for example, may be about 1 to 6 A thick.

The reference layer, in one embodiment, is a magnetic layer. Thereference layer, for example, is a cobalt-iron-boron (CoFeB) layer.Other suitable types of magnetic reference layers may also be useful. Inone embodiment, the reference layer is deposited by, for example, PVD.The reference layer is deposited as an amorphous layer. Depositing thelayer as an amorphous layer enhances TMR when it is subsequentlyrecrystallized. For example, a post anneal is performed on the MTJstack. The reference layer should be sufficiently thick withoutsacrificing the perpendicular magnetic anisotropy (PMA). The thicknessof the reference layer, for example, may be about 5 to 13 A thick.Forming the reference layer using other techniques or processes as wellas other thicknesses may also be useful.

The tunneling barrier layer 527 which is disposed over the hard layermay be a magnesium oxide (MgO) layer. Other suitable types of barrierlayers may also be useful. The tunneling barrier layer may be formed byPVD. The thickness of the tunneling barrier layer may be about 8-20 A.Preferably, the thickness of the tunneling barrier layer is about 1-12A. Other forming techniques or thicknesses for the tunneling barrierlayer may also be useful.

The free or storage layer 528 is disposed over the tunneling barrierlayer 527. The storage layer is a magnetic layer. In one embodiment, thestorage layer may be a CoFeB layer. The storage layer may be a singlelayer or a composite layer. The thickness of the storage layer may beabout 10-20 A to maintain PMA. In the case of a composite free layer, itmay include a magnetic/non-magnetic/magnetic stack. The magnetic layermay be CoFeB while the non-magnetic layer may be Pd or Pt. The thicknessof the non-magnetic layer is thin to avoid magnetic decoupling of themagnetic layer of the composite storage layer. The storage layer may beformed by, for example, PVD. Other techniques for forming the storagelayer or thicknesses may also be useful.

A capping layer 580 is provided over the storage layer. The cappinglayer, for example, serves to minimize the top electrode diffusionthrough the tunneling barrier or magnetic layers. The capping layer, forexample, may be a Ru layer or a Ta layer. Providing a composite cappinglayer may also be useful. For example, the capping layer may include Ruand Ta layers. In one embodiment, the capping layer may include aRu/CoFe/Ta or a Ru/CoFeB/Ta composite layer. In the case of thecomposite capping layer, the Ru layer may be about 10 A thick, the CoFeBor CoFe layer may be about 15 A and the Ta layer may be about 100 A.Other configurations of capping layers may also be useful. The cappinglayer may be formed by, for example, PVD.

FIG. 5b shows a cross-sectional view of another embodiment of a magneticstorage unit 510 b of a magnetic memory cell. In one embodiment, thestorage unit includes a bottom pinned pMTJ stack or element 520 disposedbetween bottom and top electrodes 531 and 532. The pMTJ element issimilar to that described in FIG. 5a . Common elements may not bedescribed or described in detail.

The pMTJ element includes a fixed layer 526, a free layer 528, and atunneling barrier layer separating the fixed layer from the free layer.The fixed layer is disposed below the free layer, forming the bottompinned pMTJ element. A capping layer 580 is disposed over the freelayer. The fixed layer, tunneling barrier layer, and free layer form thepMTJ element.

In contrast to the pMTJ element 510 a of FIG. 5a , the pMTJ element 510b of FIG. 5b includes first and second tunneling barrier layers 527 aand 527 b. This configuration produces a dual tunneling barrier pMTJelement. In one embodiment, the free layer 528 is disposed in betweenthe first and second tunneling barrier layers 527 a-527 b. The tunnelingbarrier layers, for example, may be MgO tunneling barrier layers. Othersuitable types of tunneling barrier layers may also be useful. It isalso understood that the tunneling barrier layers need not be the same.As for the other layers of the pMTJ element, they are the same orsimilar.

In one embodiment, the first tunneling barrier layer has resistance area(RA) of about 9 Ohms/um² while the second tunneling barrier layer has aRA of about 0.5 Ohms/um². The second tunneling barrier enhancesanisotropy of the storage layer, increasing thermal stability.Additionally, the second tunneling barrier reduces the damping effect ofthe storage layer, reducing switching current.

FIG. 6a shows a cross-sectional view of another embodiment of a magneticstorage unit 610 a of a magnetic memory cell. In one embodiment, thestorage unit includes a bottom pinned pMTJ stack or element 520 disposedbetween bottom and top electrodes 531 and 532. The pMTJ element issimilar to that described in FIG. 5a . Common elements may not bedescribed or described in detail.

The pMTJ element includes a fixed layer 526, a free layer 528, and atunneling barrier layer 527 disposed between the fixed layer and thefree layer. The fixed layer is disposed below the free layer, formingthe bottom pinned pMTJ element. A capping layer 580 is disposed over thefree layer. The fixed layer, tunneling barrier layer, and free layerform the pMTJ element 520.

In contrast to the pMTJ element 510 a of FIG. 5a , the pMTJ element 610a of FIG. 6a includes a crystallinity enhancing layer 668 disposedbetween the roughness smoother 566 and the second seed layer 564 b. Thecrystallinity enhancing layer serves to enhance FCC structure along(111) orientation of the second seed layer. The crystallinity enhancinglayer, in one embodiment, is a Mg layer. Other suitable types of layerswhich enhances crystallinity of the fixed layer to have a FCC structurealong the (111) orientation may also be useful. For example, thecrystallinity enhancing layer may have a BCC structure along (110)orientation or a HCP structure along the (0002) orientation. Layershaving a BCC (110) include Mo, Cr, W, Nb and V layers while layershaving a HCP (0002) include Hf and Ru layers. Other suitable types ofBCC (110) and HCP (0002) layers may also be used. The crystallinityenhancing layer may have a thickness of about 10-80 A and it may beformed by PVD. Other suitable thicknesses and forming techniques mayalso be useful.

FIG. 6b shows a cross-sectional view of another embodiment of a magneticstorage unit 610 b of a magnetic memory cell. In one embodiment, thestorage unit includes a bottom pinned pMTJ stack or element 520 disposedbetween bottom and top electrodes 531 and 532. The pMTJ element issimilar to that described in FIGS. 5a-5b and 6a . Common elements maynot be described or described in detail.

The pMTJ element includes a fixed layer 526, a free layer 528, and atunneling barrier layer disposed between the fixed layer and the freelayer. The fixed layer is disposed below the free layer, forming thebottom pinned pMTJ element. A capping layer 580 is disposed over thefree layer. The fixed layer, tunneling barrier layer, and free layerform the pMTJ element 520.

In contrast to the pMTJ element 610 a of FIG. 6a , the pMTJ element 610b of FIG. 6b includes first and second tunneling barrier layers 527 aand 527 b. This configuration produces a dual tunneling barrier pMTJelement. In one embodiment, the free layer 528 is disposed between thefirst and second tunneling barrier layers 527 a-527 b. The tunnelingbarrier layers, for example, may be MgO tunneling barrier layers. Othersuitable types of tunneling barrier layers may also be useful. It isalso understood that the tunneling barrier layers need not be the same.As for the other layers of the MTJ element, they are the same orsimilar.

The various layers of the pMTJ stack may be disposed on a dielectriclayer of BEOL process. For example, the various layers of the pMTJ stackmay be disposed on a metal level with the bottom electrode. After thelayers are formed, they are patterned to form the pMTJ stack. Patterningmay be achieved using, for example, mask and etch techniques. Suchtechnique may include forming a patterned photoresist mask over the topof the stack and etching the layers of the MTJ stack using, for example,an anisotropic etch such as a reactive ion etch (RIE). The process maycontinue to form top electrode as well as other ILD levels of the BEOLprocess.

FIGS. 7a-7l show cross-sectional views of an embodiment of a process 700for forming a device. The process includes forming a memory cell. Thememory cell, for example, may be a magnetic random access memory (MRAM)cell. The memory cell, for example, is the same or similar to thatdescribed in FIG. 2 and includes an MTJ element as described in FIGS.5a-5b and FIGS. 6a-6b . Common elements may not be described ordescribed in detail.

The cross-sectional views, for example, are along the bit linedirection. Although the cross-sectional views show one memory cell, itis understood that the device includes a plurality of memory cells of,for example, a memory array. In one embodiment, the process of formingthe cell is highly compatible with CMOS logic process. For example, thecell can be formed simultaneously with CMOS logic devices (not shown) onthe same substrate.

Referring to FIG. 7a , a substrate 705 is provided. The substrate, forexample, is a semiconductor substrate, such as a silicon substrate. Thesubstrate may be a lightly doped p-type substrate. Providing anintrinsic or other types of doped substrates, such as silicon germanium(SiGe), germanium (Ge), gallium arsenide (GaAs) or any other suitablesemiconductor materials, may also be useful. In some embodiments, thesubstrate may be a crystalline-on-insulator (COI) substrate. A COIsubstrate includes a surface crystalline layer separated from a bulkcrystalline by an insulator layer. The insulator layer, for example, maybe formed of a dielectric insulating material. The insulator layer, forexample, includes silicon oxide, which provides a buried oxide (BOX)layer. Other types of dielectric insulating materials may also beuseful. The COI substrate, for example, is a silicon-on-insulator (SOI)substrate. For example, the surface and bulk crystalline layers aresingle crystalline silicon. Other types of COI substrates may also beuseful. It is understood that the surface and bulk layers need not beformed of the same material.

The substrate is processed to define a cell region in which a memorycell is formed. The cell region may be part of an array region. Forexample, the array region may include a plurality of cell regions. Thesubstrate may include other types of device regions, such as a logicregion. Other types of regions may also be provided.

Isolation regions 780 are formed in the substrate. In one embodiment,the isolation regions are shallow trench isolation (STI) regions. Othertypes of isolation regions may also be useful. The isolation regions areprovided to isolate device regions from other regions. The isolationregions may also isolate contact regions within a cell region. Isolationregions may be formed by, for example, etching trenches in the substrateand filling them with a dielectric material, such as silicon oxide. Aplanarization process, such as chemical mechanical polish (CMP), isperformed to remove excess dielectric material, leaving, for example,STI regions isolating the device regions.

A doped well or device well 708 is formed. The well, for example, isformed after the isolation regions. In one embodiment, the well servesas a well for the select transistor of the selector unit. The well, forexample, is a second polarity type doped well. The second polarity typeis the opposite polarity type of the transistor of the cell selectorunit. In one embodiment, the device well is a p-type well for a n-typecell select transistor, such as a metal oxide semiconductor field effecttransistor (MOSFET). The device well serves as a body of the selecttransistor.

In one embodiment, an implant mask may be employed to implant thedopants to form the doped well. The implant mask, for example, is apatterned photoresist layer. The implant mask exposes regions of thesubstrate in which the second polarity wells are formed. The device wellmay be lightly or intermediately doped with second polarity typedopants. For example, the device well may have a dopant concentration ofabout 1E15 to 1E19/cm³. Other dopant concentrations may also be useful.The well, for example, may be a common device well for the array.

The process may include forming other wells for other device regions. Inthe case where the wells are different polarity type of dopantconcentration, they may be formed using separate processes, such asseparate mask and implants. For example, first polarity typed dopedwells, wells of different dopant concentrations as well as other wellsmay be formed using separate mask and implant processes.

As shown in FIG. 7b , gate layers are formed on the substrate. The gatelayers, in one embodiment, include a gate dielectric layer 742 and agate electrode layer 743 thereover. The gate dielectric layer, forexample, may be a silicon oxide layer. The gate dielectric may be formedby thermal oxidation. As for the gate electrode layer, it may be apolysilicon layer. The gate electrode layer may be formed by chemicalvapor deposition (CVD). Other suitable types of gate layers, includinghigh k dielectric and metal gate electrode layers, or other suitabletechniques for forming gate layers may also be useful.

Referring to FIG. 7c , the gate layers are patterned to form a gate 744of the select transistor of the select unit. Patterning the gate layersmay be achieved using mask and etch techniques. For example, a softmask, such as photoresist may be formed over the gate electrode layer.An exposure source may selectively expose the photoresist layer througha reticle containing the desired pattern. After selectively exposing thephotoresist layer, it is developed to form openings corresponding tolocations where the gate layers are to be removed. To improvelithographic resolution, an anti-reflective coating may be used belowthe photoresist layer. The patterned mask layer is used to pattern thegate layers. For example, an anisotropic etch, such as reactive ion etch(RIE), is used to remove exposed portions of the gate layers. Othertypes of etch processes may also be useful. The etch transfers thepattern of the mask layer to the underlying gate layers. Patterning thegate layers forms gate of the select transistor. The gate, for example,may be gate conductor along a first or word line direction. A gateconductor forms a common gate for a row of memory cells. It isunderstood that gates of the memory cells of the array may be formed.

Referring to FIG. 7d , an implant is performed to first and second S/Dregions 745 and 746 on sides of the gate. The implant, for example,implant first polarity type dopants to form first polarity type S/Dregions. An implant mask (not shown) may be used to form the firstpolarity type S/D regions in the substrate. In one embodiment, theimplant forms heavily doped first polarity type S/D regions in thesubstrate adjacent to the gates. The first polarity type dopants, forexample, include n-type dopants. The implantation process to form thefirst polarity type S/D regions may be performed together while formingfirst polarity type S/D regions in other device regions (not shown) onthe same substrate as well as first polarity type contact regions. TheS/D regions, for example, include dopant concentration of about 5E19 to1E21/cm³. Other dopant concentration may also be useful.

An LD extension implant may be performed to form LD extension regions(not shown) of the S/D regions. The LD extension implant may beperformed prior to forming the S/D regions. An implant mask may be usedto form the LD extension regions. To form the LD extension regions,first polarity type dopants are implanted into the substrate. The firstpolarity type dopants, for example, include n-type dopants. In oneembodiment, the implant forms LD extension regions in the substrateadjacent to the gates. For example, the LD extension regions extendslightly under the gates and are typically shallower than the S/Dregions. The LD extension regions, for example, include dopantconcentration of about 1E18 to 5E19/cm³. Other dopant concentration mayalso be useful. In some embodiments, a halo region may also be formed.The halo region may be formed at the same time as the LD extensionregion. After forming the LD extension regions, sidewall spacers (notshown) may be formed on sidewalls of the gate followed by forming theS/D regions.

Separate implants for second polarity type S/D and extension regions maybe performed. The second polarity type implants form S/D and extensionregions for second polarity type transistors in other device regions aswell as second polarity type contact regions.

Referring to FIG. 7e , a dielectric layer 790 ₁ is formed on thesubstrate, covering the transistors. The dielectric layer, for example,serves as a dielectric layer of an ILD layer. For example, thedielectric layer serves as a PMD or CA level of an ILD layer. Thedielectric layer, for example, is a silicon oxide layer. Other types ofdielectric layers may also be useful. The dielectric layer may be formedby CVD. Other techniques for forming the dielectric layer may also beuseful. A planarizing process may be performed to produce a planarsurface. The planarizing process, for example, may include CMP. Othertypes of planarizing processes may also be useful.

In one embodiment, contacts 793 are formed in the dielectric layer 790 ₁as shown in FIG. 7f . The contacts, for example, connect to contactregions, such as S/D regions and gate (not shown). Forming the contactsmay include forming contact vias in the dielectric layer to expose thecontact regions. Forming the contact vias may be achieved using mask andetch techniques. After the vias are formed, a conductive material isdeposited to fill the vias. The conductive material, for example, may betungsten. Other types of conductive materials may also be useful. Aplanarization process, such as CMP, is performed to remove excessconductive material, leaving contact plugs in the contact vias.

In FIG. 7g , a dielectric layer 790 ₂ is formed over the substrate,covering the lower dielectric layer 790 ₁. The dielectric layer, forexample, serves as a metal level of an ILD layer. In one embodiment, thedielectric layer serves as M1 level of the ILD layer. The dielectriclayer, for example, is a silicon oxide layer. Other types of dielectriclayers may also be useful. The dielectric layer may be formed by CVD.Other techniques for forming the dielectric layer may also be useful.Since the underlying surface is already planar, a planarizing processmay not be needed. However, it is understood that a planarizationprocess, such as CMP, may be performed if desired to produce a planarsurface.

In FIG. 7h , conductive or metal lines 795 are formed in the dielectriclayer 790 ₂. The conductive lines may be formed by damascene technique.For example, the upper dielectric layer may be etched to form trenchesor openings using, for example, mask and etch techniques. A conductivelayer is formed on the substrate, filling the openings. For example, acopper or copper alloy layer may be formed to fill the openings. Theconductive material may be formed by, for example, plating, such aselectro or electroless plating. Other types of conductive layers orforming techniques may also be useful. In one embodiment, a source lineSL is formed to connect to the source region 746 of the transistor whileother interconnects, such as interconnect pad 797 formed in M1 iscoupled to the drain region 745. The SL, for example, may be along thewordline direction. Providing SL in the bitline direction may also beuseful. As for the interconnect pad, it may serve as a storage pad.Other conductive lines and pads may also be formed.

As shown in FIG. 7i , the process continues to form a storage unit ofthe memory cell. In one embodiment, the process forms various layers 712of a storage unit with a pMTJ element. The various layers are formed onthe dielectric layer 790 ₂. The layers may include layers as describedin FIG. 5a, 5b, 6a or 6 b. The layers may be formed by PVD or othersuitable deposition techniques. The deposition technique may depend onthe type of layer. The layers are patterned to form a storage unit 710with a pMTJ element, as shown in FIG. 7j . Patterning the layers may beachieved using an anisotropic etch, such as RIE, with a patterned masklayer. Other techniques for forming the MTJ element may also be useful.

Referring to FIG. 7k , a storage dielectric layer 7903 is formed overthe MTJ storage unit. The dielectric layer covers the storage unit 710.The storage dielectric layer, for example, is a silicon oxide layer. Thestorage dielectric layer may be formed by, for example, CVD. Other typesof storage dielectric layers or forming techniques may also be useful. Aplanarization process is performed to remove excess dielectric materialto form a planar surface. The planarization process, for example, isCMP. As shown, the storage dielectric layer is disposed above thesurface of the storage unit. For example, the storage dielectric layerincludes V1 and M1 levels.

In FIG. 7l , a conductive or metal line is formed in the dielectriclayer in M2. For example, a bitline BL is formed in M2 of the dielectriclayer, coupling to the storage unit. Other metal lines may also beformed. The metal lines in M2 may be formed using a dual damascenetechnique.

Additional processes may be performed to complete forming the device.For example, the processes may include forming additional ILD levels,pad level, passivation level, pad opening, dicing, assembly and testing.Other types of processes may also be performed.

As described, the storage unit is formed in V1 and BL is formed in M2.Forming the storage unit and BL in other ILD levels, such as in an upperILD level, may also be useful. In the case where the storage unit isprovided in an upper ILD level, contact and interconnect pads may beformed in the intermediate ILD levels to connect to the storage unit.The contact and interconnect pads may be formed using dual damascenetechniques.

In addition, a metal wordline may be provided in a metal layer above thegate. The metal wordline, for example, may be coupled to the gate of theselect transistor. The metal wordline may be provided in M1 or othermetal levels. For example, the metal wordline may be parallel with theSL. Also, as described, the various components are disposed in specificvia or metal levels. It is understood that other configurations of thememory cell may also be useful. For example, the components may bedisposed in other metal or via levels.

The embodiments as described result in various advantages. In theembodiments as described, the provision of the base layer having theseed layer with roughness smoother or crystallinity enhancing layer andwetting layer enhances the FCC structure along the (111) orientation ofthe fixed layer, thereby improving PMA of the fixed layer. Furthermore,the seed layer as described in this disclosure includes a reducedthickness without sacrificing PMA of the fixed layer. A thinner seedlayer reduces total interface or surface roughness of the fixed layer.The reduced interface roughness improves thermal endurance of the pMTJstack, for example at about 400° C. As a result, a pMTJ stack withimproved thermal budget and PMA can be achieved. The seed layer withreduced thickness could also lead to a minimized pMTJ stack. Moreover,the process as described is highly compatible with logic processing ortechnology. This avoids investment of new tools and does not requirecreating new low temperature modules or processing, providing a costeffective solution.

The present disclosure may be embodied in other specific forms withoutdeparting from the spirit or essential characteristics thereof. Theforegoing embodiments, therefore, are to be considered in all respectsillustrative rather than limiting the invention described herein. Scopeof the invention is thus indicated by the appended claims, rather thanby the foregoing description, and all changes that come within themeaning and range of equivalency of the claims are intended to beembraced therein.

What is claimed is:
 1. A method of forming a storage unit of a memorycell comprising: forming a bottom electrode; forming a fixed layerdisposed over the bottom electrode, wherein the fixed layer comprises ahard layer disposed over a base layer, the base layer promotesface-centered cubic (FCC) structure along (111) orientation to increaseperpendicular magnetic anisotropy, the base layer comprises a wettinglayer, wherein the wetting layer comprises multiple layers which includeMg or Ru and layers having a BCC structure along (110) orientation orlayers having a hexagonal close packed (HCP) structure along (0002)orientation which together promote the FCC structure along the (111)orientation, and a seed layer disposed over the wetting layer, whereinthe seed layer comprises a first seed layer, a second seed layer formedover the first seed layer, the first and second seed layer form a seedbilayer defined as (Y/X), where Y is the first seed layer and is amagnetic layer and X is the second seed layer and a non-magnetic layerhaving a BCC structure along the (110) orientation with highrecrystallization temperature, and a roughness smoother to improvesurface smoothness of the seed layer, wherein the roughness smoothercomprises first and second surfactant layers, wherein the firstsurfactant layer is a layer with small atoms for filling gaps to cleanthe interface while the second surfactant layer is deposited over thefirst surfactant layer; forming at least a first tunneling barrier layerover the hard layer; forming a storage layer over the first tunnelingbarrier layer; and forming a top electrode over the storage layer. 2.The method of claim 1 wherein: Y is selected from the group comprisingNi, CoNi and NiFe; and X is selected from the group comprising Mo, Cr,W, Nb and V.
 3. The method of claim 2 wherein each of the first andsecond seed layers includes n seed bilayers, where n is ≧1, wherein thefirst layer Y of a seed bilayer includes a thickness t1 and the secondlayer X of a seed bilayer includes a thickness t2, and the n bilayers ofthe first or second seed layer is defined by (Yt₁/Xt₂)_(n), and whereina total thickness of the first or second seed layer is equal to (t1+t2)*n.
 4. The method of claim 3 wherein n is about 2-20 and the totalthickness of the seed layer which includes the first and second seedlayers and the roughness smoother is about 5 nm or less.
 5. The methodof claim 1 wherein the surface smoother is disposed between the firstand second seed layers.
 6. The method of claim 3 wherein the hard layercomprises a synthetic antiferromagnetic (SAF) layer which includes firstand second antiparallel (AP) layers separated by a coupling layer. 7.The method of claim 6 wherein an AP layer of the first and second APlayers comprises a bilayer and the AP layers are configured with a FCCstructure along the (111) orientation facilitated by the base layer. 8.The method of claim 7 wherein the bilayer of the AP layer comprisesCo/Ni, CoFe/Ni or CoFeB/Ni.
 9. The method of claim 1 wherein the totalthickness of the seed layer, including the roughness smoother, is about5nm or less.
 10. The method of claim 1 wherein the roughness smoothercomprises a plasma treatment to improve surface smoothness of the firstseed layer.
 11. The method of claim 2 comprising forming a secondtunneling barrier layer over the storage layer, wherein the first andsecond tunneling barrier layers form a dual tunneling barrier storageunit.
 12. The method of claim 3 wherein the base layer further comprisesa crystallinity enhancing layer formed between the roughness smootherand the second seed layer.
 13. The method of claim 12 wherein thecrystallinity enhancing layer comprises a Mg layer, or layer having abody-centered cubic (BCC) structure along (110) orientation or ahexagonal close packed (HCP) structure along (0002) orientation whichenhances crystallinity of the fixed layer to have the FCC structurealong the (111) orientation.
 14. A method of forming a storage unit of amemory cell comprising: forming a bottom electrode; forming a fixedlayer disposed over the bottom electrode, wherein the fixed layercomprises a hard layer disposed over a base layer, the base layerpromotes face-centered cubic (FCC) structure along (111) orientation toincrease perpendicular magnetic anisotropy, the base layer comprises awetting layer, wherein the wetting layer comprises multiple layers whichinclude Mg and layers having a BCC structure along (110) orientation orlayers having a hexagonal close packed (HCP) structure along (0002)orientation which together promote the FCC structure along the (111)orientation, and a seed layer, wherein the seed layer comprises a firstseed layer, a roughness smoother to improve surface smoothness of thefirst seed layer, and a second seed layer formed over the roughnesssmoother, wherein the roughness smoother improves surface smoothness ofthe second seed layer, wherein improved surface smoothness of the seedlayer improves surface smoothness of the hard layer to improve thermalendurance, wherein the roughness smoother comprises first and secondsurfactant layers, wherein the first surfactant layer is a layer withsmall atoms for filling gaps to clean the interface while the secondsurfactant layer is deposited over the first surfactant layer; formingat least a first tunneling barrier layer over the hard layer; forming astorage layer over the first tunneling barrier layer; and forming a topelectrode over the storage layer.
 15. A method of forming a memory cellcomprising: forming a select unit on a substrate, wherein the selectunit comprises a transistor having a first source/drain (S/D) region, asecond S/D region, and a gate between the first and second S/D regions;forming a dielectric layer on the substrate covering the select unit,wherein the dielectric layer includes a storage pad coupled to the firstS/D region; forming a storage unit on the storage pad, wherein thestorage unit comprises forming a bottom electrode, forming a fixed layerdisposed over the bottom electrode, wherein the fixed layer comprises ahard layer disposed over a base layer, the base layer promotesface-centered cubic (FCC) structure along (111) orientation to increaseperpendicular magnetic anisotropy, the base layer comprises a wettinglayer, wherein the wetting layer is a Mg layer or comprises multiplelayers which include at least the Mg layer, and a seed layer, whereinthe seed layer comprises a first seed layer, a roughness smoother toimprove surface smoothness of the first seed layer, wherein theroughness smoother comprises first and second surfactant layers, whereinthe first surfactant layer is a layer with small atoms for filling gapsto clean the interface while the second surfactant layer is depositedover the first surfactant layer, a second seed layer formed over theroughness smoother, wherein the roughness smoother improves surfacesmoothness of the second seed layer, wherein improved surface smoothnessof the seed layer improves surface smoothness of the hard layer toimprove thermal endurance, and forming at least a first tunnelingbarrier layer over the hard layer, forming a storage layer over thefirst tunneling barrier layer, and forming a top electrode over thestorage layer; and forming a bitline coupled to the top electrode layer.16. A storage unit of a memory cell comprising: a bottom electrode; afixed layer disposed over the bottom electrode, wherein the fixed layercomprises a hard layer disposed over a base layer, the base layerpromotes face-centered cubic (FCC) structure along (111) orientation toincrease perpendicular magnetic anisotropy, the base layer comprises awetting layer, wherein the wetting layer comprises multiple layers whichinclude Mg or Ru and layers having a BCC structure along (110)orientation or layers having a HCP structure along (0002) orientationwhich together promote the FCC structure along the (111) orientation,and a seed layer disposed over the wetting layer, wherein the seed layercomprises a first seed layer, a second seed layer disposed over thefirst seed layer, the first and second seed layer form a seed bilayerdefined as (Y/X), where Y is the first seed layer and is a magneticlayer and X is the second seed layer and a non-magnetic layer having aBCC structure along the (110) orientation with high recrystallizationtemperature, and a roughness smoother to improve surface smoothness ofthe seed layer, wherein the roughness smoother comprises first andsecond surfactant layers, the first surfactant layer is a layer withsmall atoms for filling gaps to clean the interface while the secondsurfactant layer is deposited over the first surfactant layer; at leasta first tunneling barrier layer disposed over the hard layer; a storagelayer disposed over the first tunneling barrier layer; and a topelectrode disposed over the storage layer.
 17. The storage unit of claim16 wherein: Y is selected from the group comprising Ni, CoNi and NiFe;and X is selected from the group comprising Mo, Cr, W, Nb and V.
 18. Thestorage unit of claim 17 wherein: each of the first and second seedlayers includes n seed bilayers, where n is ≧1; the first layer Y of aseed bilayer includes a thickness t1; the second layer X of a seedbilayer includes a thickness t2; the n bilayers of the first or secondseed layer is defined by (Yt₁/Xt₂)_(n); and wherein a total thickness ofthe first or second seed layer is equal to (t1+t2) *n.
 19. The storageunit of claim 16 comprising a second tunneling barrier layer over thestorage layer.
 20. The storage unit of claim 17 wherein: the base layerfurther comprises a crystallinity enhancing layer disposed between theroughness smoother and the second seed layer; and the surface smootheris disposed between the first and second seed layer.